TRIPYRAMID GROWTH OF EPITAXIAL SILICON

[1] BATSFORD KO, 1963, ELECT COMMUN, V38, P354

[2] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[3] STACKING FAULTS IN VAPOR GROWN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 388 - 393

[4] CHU TL, 1963, METALLURGY ADV ELECT, V19, P209

[5] LIGHT TB, 1962, METALLURGY SEMICONDU, V15, P137

[6] STRUCTURE DEFECTS IN PYROLTIC SILICON EPITAXIAL FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2813 - &

[7] NEWMAN RC, 1960, P INTERNATIONAL C BR, V1, P318

[8] REIZMAN E, 1962, METALLURY SEMICONDUC, V15, P169

[9] SATO K, 1963, OYO BUTURI, V32, P777

[10] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) : 649 - 653

[1] BATSFORD KO, 1963, ELECT COMMUN, V38, P354

[2] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &

[3] STACKING FAULTS IN VAPOR GROWN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 388 - 393

[4] CHU TL, 1963, METALLURGY ADV ELECT, V19, P209

[5] LIGHT TB, 1962, METALLURGY SEMICONDU, V15, P137

[6] STRUCTURE DEFECTS IN PYROLTIC SILICON EPITAXIAL FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2813 - &

[7] NEWMAN RC, 1960, P INTERNATIONAL C BR, V1, P318

[8] REIZMAN E, 1962, METALLURY SEMICONDUC, V15, P169

[9] SATO K, 1963, OYO BUTURI, V32, P777

[10] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) : 649 - 653