USE OF A SMALL-VOLTAGE ELECTRICAL RESPONSE TO MEASURE SODIUM MOTION IN RF SPUTTERED SIO2-FILMS

Low voltage transient and ac responses of rf sputtered SiO2 films are studied in the temperature range 473-593 K. Experimental results can be explained in terms of a model with trapped carriers and with only one type of recombining mobile charge carriers. Two distinct phenomena clearly appear in transient current curves; the rapid one is attributed to the space charge effect, the other to generation recombination. Theoretical and experimental curves are in good agreement. The concentrations and mobilities are deducted of carriers identified as Na+ ions. Concentrations values are compared (for glass and silica substrates) with ion microprobe analysis results. © 1979.