ELECTRONIC RAMAN-SCATTERING AND ANTI-RESONANCE BEHAVIOR IN HIGHLY STRESSED PHOTOEXCITED SILICON

被引：16

作者：

GUIDOTTI, D ^{[1
]}

LAI, S ^{[1
]}

KLEIN, MV ^{[1
]}

WOLFE, JP ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.43.1950

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Inelastic light scattering from photoproduced carriers is observed in stressed high-purity silicon at low temperatures. The two electronic Raman structures observed correspond to transitions between stress-split valence bands at the zone center. These transitions can be stress-tuned to the Γ-point phonon energy, thereby exhibiting Fano-type interference between competing scattering amplitudes. © 1979 The American Physical Society.

引用

页码：1950 / 1953

页数：4

共 12 条

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[8] GOURLEY PL, UNPUBLISHED
[9] Ipatova I. P., 1976, Soviet Physics - Solid State, V18, P1251
[10] KLEIN MV, 1977, LIGHT SCATTERING SOL

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