FRACTIONAL QUANTUM HALL-EFFECT IN HIGHER LANDAU-LEVELS

被引：13

作者：

BELKHIR, L ^{[1
]}

JAIN, JK ^{[1
]}

机构：

[1] SUNY STONY BROOK,DEPT PHYS,STONY BROOK,NY 11794

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 02期

基金：

美国国家科学基金会;

关键词：

QUANTUM WELLS; SEMICONDUCTORS; FRACTIONAL QUANTUM HALL EFFECT;

D O I：

10.1016/0038-1098(95)00034-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We investigate, using finite size numerical calculations, the spin-polarized fractional quantum Hall effect (FQHE) in the first excited Landau level (LL). We find evidence for the existence of an incompressible state at nu = 7/3 = 2 + 1/3, but not at nu = 2 + 2/5. Surprisingly, the 7/3 state is found to be strongest at a finite thickness. The structure of the low-lying excited states is found to be markedly different from that in the lowest LL. This study also rules out FQHE at a large number of odd-denominator fractions in the lowest LL.

引用

页码：107 / 112

页数：6

共 24 条

[11]

HALDANE FDM, QUANTUM HALL EFFECT, pCH8

[12] THEORY OF THE HALF-FILLED LANDAU-LEVEL [J].