OXIDATION OF ZNSE (110) AND ZNTE (110)

被引：11

作者：

EBINA, A

SUDA, Y

TAKAHASHI, T

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1982年 / 52卷 / 01期

关键词：

D O I：

10.1080/00207218208901397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR MATERIALS

引用

页码：77 / 88

页数：12

共 10 条

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[8] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

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[9] UNIFIED DEFECT MODEL AND BEYOND [J].

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[10]

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