EFFECTS OF UNIAXIAL STRESS ON INDIRECT EXCITON SPECTRUM OF SILICON

[1] Akimchenko I. P., 1969, Fizika Tverdogo Tela, V11, P658

[2] AKIMCHENKO IP, 1969, FIZ TVERD TELA+, V11, P528

[3] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (02) : 133 - +

[4] [Anonymous], 1966, SEMICONDUCTORS SEMIM

[5] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &

[6] BALSLEV I, 1966, J PHYS SOC JPN, VS 21, P101

[7] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[8] Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85

[9] EFFECT OF PRESSURE ON SPIN-ORBIT SPLITTING IN GERMANIUM [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (05) : 193 - &

[10] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &

[1] Akimchenko I. P., 1969, Fizika Tverdogo Tela, V11, P658

[2] AKIMCHENKO IP, 1969, FIZ TVERD TELA+, V11, P528

[3] EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (02) : 133 - +

[4] [Anonymous], 1966, SEMICONDUCTORS SEMIM

[5] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &

[6] BALSLEV I, 1966, J PHYS SOC JPN, VS 21, P101

[7] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[8] Brooks H., 1955, ADV ELECT ELECT PHYS, V7, P85

[9] EFFECT OF PRESSURE ON SPIN-ORBIT SPLITTING IN GERMANIUM [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (05) : 193 - &

[10] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &