2-ELECTRON IMPURITY STATES IN GAP - O

被引：66

作者：

JAROS, M ^{[1
]}

机构：

[1] UNIV NEWCASTLE UPON TYNE,DEPT THEORET PHYS,NEWCASTLE UPON TYNE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1975年 / 8卷 / 15期

关键词：

D O I：

10.1088/0022-3719/8/15/019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2455 / 2462

页数：8

共 11 条

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[8] CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS-II GAP-O [J].

JAROS, M ;

ROSS, SF .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (23) :3451-3456

[9]

JAROS M, 1974, 12TH P INT C PHYS SE, P401

[10] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION [J].

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