ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY

[1] APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 222 - 228

[2] CHAI YG, 1980, 2ND INT WORKSH MBE C

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &

[5] DAVIS LE, 1976, HDB AUGER ELECTRON S

[6] GERMANIUM DOPING OF GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY SOME THERMODYNAMIC ASPECTS [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 644 - 647

[7] INTERPLAY OF THERMODYNAMICS AND KINETICS IN MOLECULAR-BEAM EPITAXY (MBE) OF DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 444 - 450

[8] PARKER EHC, 1979, ANGLO FRENCH M MBE P

[9] IMPROVED P-N-JUNCTIONS IN GE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS, 1979, 18 (04): : 353 - 356

[10] INSITU CHARACTERIZATION OF MBE GROWN GAAS AND ALXGA1-XAS FILMS USING RHEED, SIMS, AND AES TECHNIQUES [J]. APPLIED PHYSICS, 1977, 13 (02): : 111 - 121

[1] APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 222 - 228

[2] CHAI YG, 1980, 2ND INT WORKSH MBE C

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &

[5] DAVIS LE, 1976, HDB AUGER ELECTRON S

[6] GERMANIUM DOPING OF GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY SOME THERMODYNAMIC ASPECTS [J]. JOURNAL OF CRYSTAL GROWTH, 1980, 50 (03) : 644 - 647

[7] INTERPLAY OF THERMODYNAMICS AND KINETICS IN MOLECULAR-BEAM EPITAXY (MBE) OF DOPED GALLIUM-ARSENIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 444 - 450

[8] PARKER EHC, 1979, ANGLO FRENCH M MBE P

[9] IMPROVED P-N-JUNCTIONS IN GE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS, 1979, 18 (04): : 353 - 356

[10] INSITU CHARACTERIZATION OF MBE GROWN GAAS AND ALXGA1-XAS FILMS USING RHEED, SIMS, AND AES TECHNIQUES [J]. APPLIED PHYSICS, 1977, 13 (02): : 111 - 121