A NOVEL HIGH-POWER LASER STRUCTURE WITH CURRENT-BLOCKED REGIONS NEAR CAVITY FACETS

被引：23

作者：

SHIBUTANI, T

KUME, M

HAMADA, K

SHIMIZU, H

ITOH, K

KANO, G

TERAMOTO, I

机构：

[1] Matsushita Electronics Corp, Takatsuki, Jpn, Matsushita Electronics Corp, Takatsuki, Jpn

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

SEMICONDUCTING GALLIUM COMPOUNDS;

D O I：

10.1109/JQE.1987.1073448

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the reported high-power GaAiAs laser structure, current-blocked regions are formed near both facets for suppressing local temperature rise. The active layer is made thin only in the vicinity of the facets in order to enlarge the spot size without significant increase of the operating current. The experimentally fabricated laser with the proposed structure exhibited a COD (catastrophic optical damage) power density 1. 4 times higher and a degradation rate 1/2 times lower than those of conventional-structure lasers.

引用

页码：760 / 764

页数：5

共 5 条

[1]

BOTEZ D, 1984, 9TH P IEEE INT SEM L, P36

[2] SEMICONDUCTOR-LASERS WITH A THIN ACTIVE LAYER (GREATER-THAN 0.1 MU-M) FOR OPTICAL COMMUNICATIONS [J].