A O2W CW LASER WITH BURIED TWIN-RIDGE SUBSTRATE STRUCTURE

被引：50

作者：

HAMADA, K

WADA, M

SHIMIZU, H

KUME, M

SUSA, F

SHIBUTANI, T

YOSHIKAWA, N

ITOH, K

KANO, G

TERAMOTO, I

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 06期

关键词：

D O I：

10.1109/JQE.1985.1072711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：623 / 628

页数：6

共 20 条

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[3] VERY HIGH CW OUTPUT POWER AND POWER CONVERSION EFFICIENCY FROM CURRENT-CONFINED CDH-LOC DIODE-LASERS [J].

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APPLIED PHYSICS LETTERS, 1982, 41 (04) :310-312

[5] NONPLANAR LARGE OPTICAL CAVITY GAAS-GAALAS SEMICONDUCTOR-LASER [J].

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APPLIED PHYSICS LETTERS, 1979, 35 (10) :734-736

[6] SEMICONDUCTOR-LASERS WITH A THIN ACTIVE LAYER (GREATER-THAN 0.1 MU-M) FOR OPTICAL COMMUNICATIONS [J].

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ITO, R .

APPLIED OPTICS, 1978, 17 (02) :311-315

[7] HIGHLY EFFICIENT (GAAL)AS BURIED-HETEROSTRUCTURE LASERS WITH BURIED OPTICAL GUIDE [J].

CHINONE, N ;

SAITO, K ;

ITO, R ;

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SHIGE, N .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :513-516

[8]

Engelmann R. W. H., 1982, International Electron Devices Meeting. Technical Digest, P350

[9]

ENGELMANN RWH, 1982, 8TH P IEEE INT SEM L, P26

[10] NEW DIELECTRIC FACET REFLECTOR FOR SEMICONDUCTOR-LASERS [J].

ETTENBERG, M .

APPLIED PHYSICS LETTERS, 1978, 32 (11) :724-725

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