TERRACED-HETEROSTRUCTURE LARGE-OPTICAL-CAVITY ALGAAS DIODE-LASER - A NEW TYPE OF HIGH-POWER CW SINGLE-MODE DEVICE

被引：11

作者：

BOTEZ, D

CONNOLLY, JC

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 04期

关键词：

D O I：

10.1063/1.93517

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：310 / 312

页数：3

相关论文

共 15 条

[1] CONSTRICTED DOUBLE-HETEROSTRUCTURE (ALGA)AS DIODE-LASERS
BOTEZ, D
ZORY, P
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (04) : 261 - 263
[2] CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS DIODE-LASERS - STRUCTURES AND ELECTROOPTICAL CHARACTERISTICS
BOTEZ, D
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (12) : 2290 - 2309
[3] CW HIGH-POWER SINGLE-MODE OPERATION OF CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS LASERS WITH A LARGE OPTICAL CAVITY
BOTEZ, D
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 190 - 192
[4] VERY LOW THRESHOLD-CURRENT TEMPERATURE SENSITIVITY IN CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS LASERS
BOTEZ, D
CONNOLLY, JC
GILBERT, DB
ETTENBERG, M
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 3840 - 3844
[5] GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS
BOTEZ, D
TSANG, WT
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 234 - 237
[6] BOTEZ D, 1981, TECHNICAL DIGEST INT, P447
[7] NONPLANAR LARGE OPTICAL CAVITY GAAS-GAALAS SEMICONDUCTOR-LASER
BURNHAM, RD
SCIFRES, DR
STREIFER, W
PELED, S
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 734 - 736
[8] MODE CHARACTERISTICS OF NONPLANAR DOUBLE-HETEROJUNCTION AND LARGE-OPTICAL-CAVITY LASER STRUCTURES
BUTLER, JK
BOTEZ, D
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) : 952 - 961
[9] NEW DIELECTRIC FACET REFLECTOR FOR SEMICONDUCTOR-LASERS
ETTENBERG, M
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 724 - 725
[10] CURVED JUNCTION STABILIZED FILAMENT (CJS']JSF) DOUBLE-HETEROSTRUCTURE INJECTION-LASER
FIGUEROA, L
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 55 - 57