NUMERICAL-SIMULATION AND COMPARISON OF SI BJTS AND SI1-XGEX HBTS

[1] Busch G., 1960, HELV PHYS ACTA, V33, P437

[2] ELECTRON DRIFT VELOCITY IN SILICON [J]. PHYSICAL REVIEW B, 1975, 12 (06) : 2265 - 2284

[3] Gibbons J. F., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P566, DOI 10.1109/IEDM.1988.32878

[4] HANSCH W, 1986, J APPL PHYS, V60, P650, DOI 10.1063/1.337408

[5] VELOCITY-FIELD RELATIONSHIP OF INAS-INP ALLOYS INCLUDING EFFECTS OF ALLOY SCATTERING [J]. APPLIED PHYSICS LETTERS, 1976, 28 (08) : 458 - 461

[6] SI/SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS PRODUCED BY LIMITED REACTION PROCESSING [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) : 52 - 54

[7] GENERALIZED BROOKS FORMULA AND THE ELECTRON-MOBILITY IN SIXGE1-X ALLOYS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 160 - 162

[8] TECHNIQUES FOR SMALL-SIGNAL ANALYSIS OF SEMICONDUCTOR-DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) : 2028 - 2037

[9] ON THE ESTIMATION OF BASE TRANSIT-TIME IN ALGAAS/GAAS BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) : 90 - 92

[10] Mertens R., 1987, Proceedings of the 1987 Bipolar Circuits and Technology Meeting (Cat. No.87CH2509-8), P54

[1] Busch G., 1960, HELV PHYS ACTA, V33, P437

[2] ELECTRON DRIFT VELOCITY IN SILICON [J]. PHYSICAL REVIEW B, 1975, 12 (06) : 2265 - 2284

[3] Gibbons J. F., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P566, DOI 10.1109/IEDM.1988.32878

[4] HANSCH W, 1986, J APPL PHYS, V60, P650, DOI 10.1063/1.337408

[5] VELOCITY-FIELD RELATIONSHIP OF INAS-INP ALLOYS INCLUDING EFFECTS OF ALLOY SCATTERING [J]. APPLIED PHYSICS LETTERS, 1976, 28 (08) : 458 - 461

[6] SI/SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS PRODUCED BY LIMITED REACTION PROCESSING [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) : 52 - 54

[7] GENERALIZED BROOKS FORMULA AND THE ELECTRON-MOBILITY IN SIXGE1-X ALLOYS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 160 - 162

[8] TECHNIQUES FOR SMALL-SIGNAL ANALYSIS OF SEMICONDUCTOR-DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) : 2028 - 2037

[9] ON THE ESTIMATION OF BASE TRANSIT-TIME IN ALGAAS/GAAS BIPOLAR-TRANSISTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (03) : 90 - 92

[10] Mertens R., 1987, Proceedings of the 1987 Bipolar Circuits and Technology Meeting (Cat. No.87CH2509-8), P54