ON THE ESTIMATION OF BASE TRANSIT-TIME IN ALGAAS/GAAS BIPOLAR-TRANSISTORS

被引：36

作者：

MAZIAR, CM ^{[1
]}

LUNDSTROM, MS ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 03期

关键词：

D O I：

10.1109/EDL.1987.26562

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：90 / 92

页数：3

共 11 条

[1] ASBECK PM, 1982, IEEE ELECTRON DEVICE, V13, P366
[2] CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS
BACCARANI, G
JACOBONI, C
MAZZONE, AM
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 5 - 10
[3] AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON
BACCARANI, G
WORDEMAN, MR
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (04) : 407 - 416
[4] HOLE AND ELECTRON MOBILITIES IN HEAVILY DOPED SILICON - COMPARISON OF THEORY AND EXPERIMENT
BENNETT, HS
[J]. SOLID-STATE ELECTRONICS, 1983, 26 (12) : 1157 - 1166
[5] DIFFUSION NEAR AN ABSORBING BOUNDARY
BERZ, F
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (12) : 1245 - 1255
[6] ELECTRON-TRANSPORT IN PLANAR-DOPED BARRIER STRUCTURES USING AN ENSEMBLE MONTE-CARLO METHOD
LITTLEJOHN, MA
TREW, RJ
HAUSER, JR
GOLIO, JM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 449 - 454
[7] MONTE-CARLO EVALUATION OF ELECTRON-TRANSPORT IN HETEROJUNCTION BIPOLAR-TRANSISTOR BASE STRUCTURES
MAZIAR, CM
KLAUSMEIERBROWN, ME
BANDYOPADHYAY, S
LUNDSTROM, MS
DATTA, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) : 881 - 888
[8] THERMIONIC SATURATION OF DIFFUSION CURRENTS IN TRANSISTORS
PERSKY, G
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1345 - &
[9] QUESTIONABILITY OF DRIFT-DIFFUSION TRANSPORT IN ANALYSIS OF SMALL SEMICONDUCTOR-DEVICES
ROHR, P
LINDHOLM, FA
ALLEN, KR
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 729 - 734
[10] MINORITY-CARRIER MOBILITY IN P-TYPE GAAS
WALUKIEWICZ, W
LAGOWSKI, J
JASTRZEBSKI, L
GATOS, HC
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 5040 - 5042

← 1 2 →