MINORITY-CARRIER MOBILITY IN P-TYPE GAAS

被引：90

作者：

WALUKIEWICZ, W

LAGOWSKI, J

JASTRZEBSKI, L

GATOS, HC

机构：

[1] Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 07期

关键词：

D O I：

10.1063/1.325602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Theoretical calculations of electron mobility in p-type GaAs were carried out taking into consideration the screening effects and all major scattering processes. Calculated values of mobility are presented as a function of carrier concentration, compensation ratio, and temperature. The basic differences between minority-carrier mobility in p-type GaAs and electron mobility in n-type GaAs are pointed out. A practical procedure is also presented for the evaluation of minority-carrier mobility from available electron-mobility data.

引用

页码：5040 / 5042

页数：3

共 11 条

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