INTRINSIC OSCILLATORY PHOTOCONDUCTIVITY AND BAND STRUCTURE OF GAAS

被引：44

作者：

SHAW, RW

机构：

来源：

PHYSICAL REVIEW B | 1971年 / 3卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.3.3283

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3283 / &

共 14 条

[1] K.P CALCULATION OF EFFECTIVE MASSES IN ZINC-BLENDE SEMICONDUCTORS
BOWERS, RL
MAHAN, GD
[J]. PHYSICAL REVIEW, 1969, 185 (03): : 1073 - &
[2] ELECTRON EFFECTIVE MASSES OF INAS AND GAAS AS A FUNCTION OF TEMPERATURE AND DOPING
CARDONA, M
[J]. PHYSICAL REVIEW, 1961, 121 (03): : 752 - &
[3] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS
EHRENREICH, H
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963
[4] BAND STRUCTURE OF INDIUM ANTIMONIDE
KANE, EO
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261
[5] KREHER K, 1964, FORTSCHR PHYSIK, V12, P489
[6] FIRST ORDER RAMAN EFFECT IN 3-V COMPOUNDS
MOORADIAN, A
WRIGHT, GB
[J]. SOLID STATE COMMUNICATIONS, 1966, 4 (09) : 431 - +
[7] OSCILLATORY PHOTOCONDUCTIVITY OF EPITAXIAL GAAS
NAHORY, RE
[J]. PHYSICAL REVIEW, 1969, 178 (03): : 1293 - &
[8] LONGITUDINAL-OPTICAL-PHONON-PLASMON COUPLING IN GAAS
OLSON, CG
LYNCH, DW
[J]. PHYSICAL REVIEW, 1969, 177 (03): : 1231 - &
[9] SPLIT-OFF VALENCE-BAND PARAMETERS FOR GAAS FROM STRESS-MODULATED MAGNETOREFLECTIVITY
REINE, M
AGGARWAL, RL
LAX, B
WOLFE, CM
[J]. PHYSICAL REVIEW B, 1970, 2 (02): : 458 - &
[10] PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY IN UNDOPED EPITAXIAL GAAS
SHAH, J
LEITE, RCC
NAHORY, RE
[J]. PHYSICAL REVIEW, 1969, 184 (03): : 811 - &