PHOTOLUMINESCENCE AND PHOTOCONDUCTIVITY IN UNDOPED EPITAXIAL GAAS

被引：48

作者：

SHAH, J

LEITE, RCC

NAHORY, RE

机构：

来源：

PHYSICAL REVIEW | 1969年 / 184卷 / 03期

关键词：

D O I：

10.1103/PhysRev.184.811

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：811 / &

共 23 条

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[5] HOPFIELD JJ, 1968, 1967 P INT C 2 6 SEM, P791
[6] HOPFIELD JJ, 1965, 7 P INT C PHYS SEM P
[7] HOPFIELD JJ, 1968, 1967 P INT C 2 6 SEM, P798
[8] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH
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EFFER, D
EVANS, PR
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[9] FREQUENCY SHIFT WITH TEMPERATURE AS EVIDENCE FOR DONOR-ACCEPTOR PAIR RECOMBINATION IN RELATIVELY PURE N-TYPE GAAS
LEITE, RCC
DIGIOVANNI, AE
[J]. PHYSICAL REVIEW, 1967, 153 (03): : 841 - +
[10] LASER-EXCITED PHOTOLUMINESCENCE OF OVERCOMPENSATED P+ GAAS + BAND-FILLING MODEL ( FREQUENCY SHIFT WITH EXCITATION INTENSITY 77 DEGREES K E )
LEITE, RCC
RIPPER, JE
GUGLIELMI, PA
[J]. APPLIED PHYSICS LETTERS, 1964, 5 (09) : 188 - +