DIFFUSION NEAR AN ABSORBING BOUNDARY

[1] ABRAMOWITZ M, 1965, HDB MATHEMATICAL FUN

[2] CONWELL EM, 1967, HIGH FIELD TRANSPO S, V9

[3] GUMMEL HK, 1964, IEEE T, VED11, P455

[4] JAHNKE E, 1945, TABLES FUNCTIONS

[5] AN FT ANOMALY [J]. ELECTRONICS LETTERS, 1973, 9 (15) : 338 - 339

[6] Loeb L. B., 1934, KINETIC THEORY GASES, V2nd ed.

[7] MEASUREMENT OF HIGH-FIELD CARRIER DRIFT VELOCITIES IN SILICON BY A TIME-OF-FLIGHT TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 38 - +

[8] THERMIONIC SATURATION OF DIFFUSION CURRENTS IN TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1345 - &

[9] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 175 - 180

[1] ABRAMOWITZ M, 1965, HDB MATHEMATICAL FUN

[2] CONWELL EM, 1967, HIGH FIELD TRANSPO S, V9

[3] GUMMEL HK, 1964, IEEE T, VED11, P455

[4] JAHNKE E, 1945, TABLES FUNCTIONS

[5] AN FT ANOMALY [J]. ELECTRONICS LETTERS, 1973, 9 (15) : 338 - 339

[6] Loeb L. B., 1934, KINETIC THEORY GASES, V2nd ed.

[7] MEASUREMENT OF HIGH-FIELD CARRIER DRIFT VELOCITIES IN SILICON BY A TIME-OF-FLIGHT TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 38 - +

[8] THERMIONIC SATURATION OF DIFFUSION CURRENTS IN TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1345 - &

[9] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 175 - 180