HOLE AND ELECTRON MOBILITIES IN HEAVILY DOPED SILICON - COMPARISON OF THEORY AND EXPERIMENT

被引：71

作者：

BENNETT, HS

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(83)90143-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1157 / 1166

页数：10

共 32 条

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