EFFECT OF DONOR IMPURITIES ON THE DENSITY OF STATES NEAR THE BAND EDGE IN SILICON

被引：19

作者：

BENNETT, HS

LOWNEY, JR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.329497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5633 / 5642

页数：10

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共 20 条

[1] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI
BALKANSKI, M
AZIZA, A
AMZALLAG, E
[J]. PHYSICA STATUS SOLIDI, 1969, 31 (01): : 323 - +
[2] ON THE NUMBER OF BOUND STATES IN A CENTRAL FIELD OF FORCE
BARGMANN, V
[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 1952, 38 (11) : 961 - 966
[3] ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .1.
BARKER, JR
FERRY, DK
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (06) : 519 - 530
[4] CHADEAU K, 1977, INVERSE PROBLEMS QUA, pCH6
[5] TRANSITION FROM DISCRETE TO CONTINUOUS SPECTRA
DEWITT, BS
[J]. PHYSICAL REVIEW, 1956, 103 (05): : 1565 - 1571
[6] DWIGHT HB, 1961, TABLES INTEGRALS OTH, P119
[7] FRIEDEL, 1955, PHIL MAG, V46
[8] ENERGY LEVEL SHIFTS IN A LARGE ENCLOSURE
FUKUDA, N
NEWTON, RG
[J]. PHYSICAL REVIEW, 1956, 103 (05): : 1558 - 1564
[9] FUMI FG, 1955, PHIL MAG, V46
[10] THEORETICAL CALCULATIONS OF FERMI LEVEL AND OF OTHER PARAMETERS IN PHOSPHORUS DOPED SILICON AT DIFFUSION TEMPERATURES
JAIN, RK
VANOVERS.RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (02) : 155 - 165