THEORETICAL CALCULATIONS OF FERMI LEVEL AND OF OTHER PARAMETERS IN PHOSPHORUS DOPED SILICON AT DIFFUSION TEMPERATURES

被引：45

作者：

JAIN, RK ^{[1
]}

VANOVERS.RJ ^{[1
]}

机构：

[1] KATHOLIEKE UNIV LEUVEN, DEPT ELEKTROTECH, HEVERLEE, BELGIUM

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 02期

关键词：

D O I：

10.1109/T-ED.1974.17885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：155 / 165

页数：11

共 35 条

[1]

ADLER RB, 1966, INTRO SEMICONDUCTOR, V1

[2] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J].

BARBER, HD .

SOLID-STATE ELECTRONICS, 1967, 10 (11) :1039-&

[3]

BONCHBRUYEVICH VL, 1966, ELECTRONIC THEORY HE

[4] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J].

CONWELL, EM .

PHYSICAL REVIEW, 1956, 103 (01) :51-60

[5] INFLUENCE OF HEAVY DOPING EFFECTS ON FT PREDICTION OF TRANSISTORS [J].

DEMAN, H ;

MERTENS, R ;

VANOVERS.R .

ELECTRONICS LETTERS, 1973, 9 (8-9) :174-176

[6] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J].

FAIR, RB ;

WEBER, GR .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :273-279

[7]

Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[8] IMPURITY-BAND TAILS IN HIGH-DENSITY LIMIT .I. MINIMUM COUNTING METHODS [J].

HALPERIN, BI ;

LAX, M .

PHYSICAL REVIEW, 1966, 148 (02) :722-+

[9] GENERAL THEORY OF IMPURITY DIFFUSION IN SEMICONDUCTORS VIA VACANCY MECHANISM [J].

HU, SM .

PHYSICAL REVIEW, 1969, 180 (03) :773-+

[10] APPROXIMATE THEORY OF EMITTER-PUSH EFFECT [J].

HU, SM ;

YEH, TH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4615-&

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