EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON

被引：148

作者：

FAIR, RB

WEBER, GR

机构：

[1] BELL TEL LABS, READING, PA 19603 USA

[2] BELL TELE LABS, MURRAY HILL, NJ 07971 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.1661873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：273 / 279

页数：7

相关论文

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