QUANTITATIVE THEORY OF RETARDED BASE DIFFUSION IN SILICON N-P-N STRUCTURES WITH ARSENIC EMITTERS

被引：33

作者：

FAIR, RB ^{[1
]}

机构：

[1] BELL TEL LABS,READING,PA 19603

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 01期

关键词：

D O I：

10.1063/1.1661875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：283 / 291

页数：9

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