学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC DIFFUSIONS IN SILICON
被引:30
作者
:
FAIR, RB
论文数:
0
引用数:
0
h-index:
0
FAIR, RB
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1972年
/ 43卷
/ 03期
关键词
:
D O I
:
10.1063/1.1661253
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1278 / &
相关论文
共 8 条
[1]
A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING ION-SCATTERING TECHNIQUE
CHOU, S
论文数:
0
引用数:
0
h-index:
0
CHOU, S
DAVIDSON, LA
论文数:
0
引用数:
0
h-index:
0
DAVIDSON, LA
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
GIBBONS, JF
[J].
APPLIED PHYSICS LETTERS,
1970,
17
(01)
: 23
-
&
[2]
PROPERTIES OF SILICON AND GERMANIUM .2.
CONWELL, EM
论文数:
0
引用数:
0
h-index:
0
CONWELL, EM
[J].
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS,
1958,
46
(06):
: 1281
-
1300
[3]
INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS
HU, SM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Facility, Hopewell Junction, NY
HU, SM
SCHMIDT, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Facility, Hopewell Junction, NY
SCHMIDT, S
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(09)
: 4272
-
+
[4]
KENDALL DL, 1969, SEMICONDUCTOR SILICO
[5]
EFFECT OF HEAVY DOPING ON DIFFUSION OF IMPURITIES IN SILICON
MILLEA, MF
论文数:
0
引用数:
0
h-index:
0
MILLEA, MF
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1966,
27
(02)
: 315
-
&
[6]
SIMPLIFIED EXPRESSION FOR DISTRIBUTION OF DIFFUSED IMPURITY
NAKAJIMA, Y
论文数:
0
引用数:
0
h-index:
0
NAKAJIMA, Y
OHKAWA, S
论文数:
0
引用数:
0
h-index:
0
OHKAWA, S
FUKUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FUKUKAWA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1971,
10
(01)
: 162
-
&
[7]
TSAI JS, UNPUBLISHED
[8]
WEBER G, UNPUBLISHED
←
1
→
共 8 条
[1]
A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING ION-SCATTERING TECHNIQUE
CHOU, S
论文数:
0
引用数:
0
h-index:
0
CHOU, S
DAVIDSON, LA
论文数:
0
引用数:
0
h-index:
0
DAVIDSON, LA
GIBBONS, JF
论文数:
0
引用数:
0
h-index:
0
GIBBONS, JF
[J].
APPLIED PHYSICS LETTERS,
1970,
17
(01)
: 23
-
&
[2]
PROPERTIES OF SILICON AND GERMANIUM .2.
CONWELL, EM
论文数:
0
引用数:
0
h-index:
0
CONWELL, EM
[J].
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS,
1958,
46
(06):
: 1281
-
1300
[3]
INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS
HU, SM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Facility, Hopewell Junction, NY
HU, SM
SCHMIDT, S
论文数:
0
引用数:
0
h-index:
0
机构:
IBM Components Division, East Fishkill Facility, Hopewell Junction, NY
SCHMIDT, S
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(09)
: 4272
-
+
[4]
KENDALL DL, 1969, SEMICONDUCTOR SILICO
[5]
EFFECT OF HEAVY DOPING ON DIFFUSION OF IMPURITIES IN SILICON
MILLEA, MF
论文数:
0
引用数:
0
h-index:
0
MILLEA, MF
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1966,
27
(02)
: 315
-
&
[6]
SIMPLIFIED EXPRESSION FOR DISTRIBUTION OF DIFFUSED IMPURITY
NAKAJIMA, Y
论文数:
0
引用数:
0
h-index:
0
NAKAJIMA, Y
OHKAWA, S
论文数:
0
引用数:
0
h-index:
0
OHKAWA, S
FUKUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FUKUKAWA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1971,
10
(01)
: 162
-
&
[7]
TSAI JS, UNPUBLISHED
[8]
WEBER G, UNPUBLISHED
←
1
→