AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON

[1] ANDERSON DG, 1965, ACM J, V12, P547

[2] CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 5 - 10

[3] PARAMETER SELECTION FOR NEWTON-LIKE METHODS APPLICABLE TO NON-LINEAR PARTIAL-DIFFERENTIAL EQUATIONS [J]. SIAM JOURNAL ON NUMERICAL ANALYSIS, 1980, 17 (06) : 806 - 822

[4] BLATT FJ, 1968, PHYSICS ELECTRONIC C

[5] TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) : 38 - +

[6] BLOTEKJAER K, 1966, ERICSSON TECHNICS, V22, P125

[7] HIGH-FIELD DIFFUSION OF ELECTRONS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 278 - 280

[8] MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 784 - 790

[9] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[10] DIFFUSION EFFECTS AND BALLISTIC TRANSPORT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 951 - 953

[1] ANDERSON DG, 1965, ACM J, V12, P547

[2] CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 5 - 10

[3] PARAMETER SELECTION FOR NEWTON-LIKE METHODS APPLICABLE TO NON-LINEAR PARTIAL-DIFFERENTIAL EQUATIONS [J]. SIAM JOURNAL ON NUMERICAL ANALYSIS, 1980, 17 (06) : 806 - 822

[4] BLATT FJ, 1968, PHYSICS ELECTRONIC C

[5] TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) : 38 - +

[6] BLOTEKJAER K, 1966, ERICSSON TECHNICS, V22, P125

[7] HIGH-FIELD DIFFUSION OF ELECTRONS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 278 - 280

[8] MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 784 - 790

[9] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[10] DIFFUSION EFFECTS AND BALLISTIC TRANSPORT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 951 - 953