AN INVESTIGATION OF STEADY-STATE VELOCITY OVERSHOOT IN SILICON

[11] ALCOHOL-CONSUMPTION AND BLOOD-PRESSURE - SURVEY OF THE RELATIONSHIP AT A HEALTH-SCREENING CLINIC [J]. MEDICAL JOURNAL OF AUSTRALIA, 1982, 1 (02) : 65 - 69

[12] SEMICONDUCTOR STRUCTURES FOR REPEATED VELOCITY OVERSHOOT [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 407 - 408

[13] HOT-ELECTRONS IN SHORT-GATE CHARGE-COUPLED-DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (12) : 1399 - 1405

[14] BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 937 - 940

[15] 2-DIMENSIONAL PARTICLE MODELS IN SEMICONDUCTOR-DEVICE ANALYSIS [J]. ELECTRONICS LETTERS, 1974, 10 (23) : 484 - 486

[16] TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 781 - 787

[17] FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS AT 300K AND 77K WITH TYPICAL ACTIVE-LAYER DOPING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (05) : 519 - 519

[18] MOGLESTUE C, 1979, NUMERICAL ANAL SEMIC

[19] DETERMINATION OF TRANSIENT REGIME OF HOT CARRIERS IN SEMICONDUCTORS, USING THE RELAXATION-TIME APPROXIMATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 825 - 832

[20] CALCULATION OF DISTRIBUTION FUNCTIONS BY EXPLOITING STABILITY OF STEADY STATE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (03) : 643 - &

[11] ALCOHOL-CONSUMPTION AND BLOOD-PRESSURE - SURVEY OF THE RELATIONSHIP AT A HEALTH-SCREENING CLINIC [J]. MEDICAL JOURNAL OF AUSTRALIA, 1982, 1 (02) : 65 - 69

[12] SEMICONDUCTOR STRUCTURES FOR REPEATED VELOCITY OVERSHOOT [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 407 - 408

[13] HOT-ELECTRONS IN SHORT-GATE CHARGE-COUPLED-DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (12) : 1399 - 1405

[14] BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 937 - 940

[15] 2-DIMENSIONAL PARTICLE MODELS IN SEMICONDUCTOR-DEVICE ANALYSIS [J]. ELECTRONICS LETTERS, 1974, 10 (23) : 484 - 486

[16] TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 781 - 787

[17] FREQUENCY LIMITS OF GAAS AND INP FIELD-EFFECT TRANSISTORS AT 300K AND 77K WITH TYPICAL ACTIVE-LAYER DOPING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (05) : 519 - 519

[18] MOGLESTUE C, 1979, NUMERICAL ANAL SEMIC

[19] DETERMINATION OF TRANSIENT REGIME OF HOT CARRIERS IN SEMICONDUCTORS, USING THE RELAXATION-TIME APPROXIMATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 825 - 832

[20] CALCULATION OF DISTRIBUTION FUNCTIONS BY EXPLOITING STABILITY OF STEADY STATE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (03) : 643 - &