SEMICONDUCTOR STRUCTURES FOR REPEATED VELOCITY OVERSHOOT

[1] Cho A. Y., 1975, PROGR SOLID STATE CH

[2] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[3] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +

[4] EASTMAN LF, 1982, I PHYSICS C SERIES, V63, P245

[5] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &

[6] FAWCETT W, 1973, ELECTRONS CRYSTALLIN

[7] TRANSIENT VELOCITY CHARACTERISTICS OF ELECTRONS IN GAAS WITH GAMMA-L-X CONDUCTION-BAND ORDERING [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4064 - 4068

[8] KUROSAWA T, 1966, J PHYS SOC JPN, VS 21, P424

[9] Malik R. J., 1980, International Electron Devices Meeting. Technical Digest, P456

[10] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837

[1] Cho A. Y., 1975, PROGR SOLID STATE CH

[2] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[3] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +

[4] EASTMAN LF, 1982, I PHYSICS C SERIES, V63, P245

[5] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &

[6] FAWCETT W, 1973, ELECTRONS CRYSTALLIN

[7] TRANSIENT VELOCITY CHARACTERISTICS OF ELECTRONS IN GAAS WITH GAMMA-L-X CONDUCTION-BAND ORDERING [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4064 - 4068

[8] KUROSAWA T, 1966, J PHYS SOC JPN, VS 21, P424

[9] Malik R. J., 1980, International Electron Devices Meeting. Technical Digest, P456

[10] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1980, 16 (22) : 836 - 837