MONTE-CARLO EVALUATION OF ELECTRON-TRANSPORT IN HETEROJUNCTION BIPOLAR-TRANSISTOR BASE STRUCTURES

[1] ANKRI D, 1982, ELECTRON LETT 0819, P750

[2] Asbeck P. M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P864

[3] ASBECK PM, 1982, IEEE ELECTRON DEVICE, V13, P366

[4] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[5] Kofol S., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P198

[6] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537

[7] HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 126 - 130

[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[9] MODELING AND CHARACTERIZATION FOR HIGH-SPEED GAALAS-GAAS N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 467 - 473

[10] ELECTRON-TRANSPORT IN PLANAR-DOPED BARRIER STRUCTURES USING AN ENSEMBLE MONTE-CARLO METHOD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 449 - 454

[1] ANKRI D, 1982, ELECTRON LETT 0819, P750

[2] Asbeck P. M., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P864

[3] ASBECK PM, 1982, IEEE ELECTRON DEVICE, V13, P366

[4] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110

[5] Kofol S., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P198

[6] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537

[7] HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 126 - 130

[8] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[9] MODELING AND CHARACTERIZATION FOR HIGH-SPEED GAALAS-GAAS N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 467 - 473

[10] ELECTRON-TRANSPORT IN PLANAR-DOPED BARRIER STRUCTURES USING AN ENSEMBLE MONTE-CARLO METHOD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 449 - 454