HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD

被引：168

作者：

KROEMER, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：126 / 130

页数：5

共 28 条

[1]

ANKRI D, 1982, ELECTRON LETT, V18, P751

[2]

ANKRI D, UNPUB GAAS RELATED C

[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS [J].

ASAHI, H ;

KAWAMURA, Y ;

NAGAI, H .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4928-4931

[4]

Asbeck P. M., 1981, International Electron Devices Meeting, P629

[5] NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ASBECK, PM ;

MILLER, DL ;

ASATOURIAN, R ;

KIRKPATRICK, CG .

ELECTRON DEVICE LETTERS, 1982, 3 (12) :403-406

[6]

BLOOD P, 1982, J APPL PHYS, V53, P3142

[7] THE PERMEABLE BASE TRANSISTOR AND ITS APPLICATION TO LOGIC-CIRCUITS [J].

BOZLER, CO ;

ALLEY, GD .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :46-52

[8] METAL-(N) ALGAAS-GAAS TWO-DIMENSIONAL ELECTRON-GAS FET [J].

DELAGEBEAUDEUF, D ;

LINH, NT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (06) :955-960

[9]

HARRIS JS, 1982, 14TH C SOL STAT DEV, P199

[10] ELEMENTARY THEORY OF HETEROJUNCTIONS [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :1016-1021

← 1 2 3 →