MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP ON (100) GAAS

[1] [Anonymous], 1978, HETEROSTRUCTURE LASE

[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP HOMOEPITAXIAL LAYERS AND THEIR ELECTRICAL AND OPTICAL-PROPERTIES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2852 - 2859

[3] ASAHI H, 1981, 1981 P INT S GALL AR, pL8

[4] UBER DAS AIP - DARSTELLUNG, ELEKTRISCHE UND OPTISCHE EIGENSCHAFTEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 302 - 309

[5] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 154 - 165

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNDOPED LOW-RESISTIVITY INXGA1-XP ON GAAS AT HIGH SUBSTRATE TEMPERATURES (500-DEGREES-C-580-DEGREES-C) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L807 - L810

[7] KAWAMURA Y, 1981, J APPL PHYS, V52, P3445, DOI 10.1063/1.329119

[8] EXCITON ABSORPTION, PHOTOLUMINESCENCE AND BAND-STRUCTURE OF N-FREE AND N-DOPED IN-1-XGA-XP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (06) : 629 - 637

[9] GALNAS-ALLNAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4033 - 4037

[10] ASYMMETRIC CRACKING IN III-V COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1650 - 1656

[1] [Anonymous], 1978, HETEROSTRUCTURE LASE

[2] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP HOMOEPITAXIAL LAYERS AND THEIR ELECTRICAL AND OPTICAL-PROPERTIES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2852 - 2859

[3] ASAHI H, 1981, 1981 P INT S GALL AR, pL8

[4] UBER DAS AIP - DARSTELLUNG, ELEKTRISCHE UND OPTISCHE EIGENSCHAFTEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 302 - 309

[5] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 154 - 165

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNDOPED LOW-RESISTIVITY INXGA1-XP ON GAAS AT HIGH SUBSTRATE TEMPERATURES (500-DEGREES-C-580-DEGREES-C) [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L807 - L810

[7] KAWAMURA Y, 1981, J APPL PHYS, V52, P3445, DOI 10.1063/1.329119

[8] EXCITON ABSORPTION, PHOTOLUMINESCENCE AND BAND-STRUCTURE OF N-FREE AND N-DOPED IN-1-XGA-XP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (06) : 629 - 637

[9] GALNAS-ALLNAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4033 - 4037

[10] ASYMMETRIC CRACKING IN III-V COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) : 1650 - 1656