EXCITON ABSORPTION, PHOTOLUMINESCENCE AND BAND-STRUCTURE OF N-FREE AND N-DOPED IN-1-XGA-XP

被引：119

作者：

NELSON, RJ

HOLONYAK, N

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1976年 / 37卷 / 06期

关键词：

D O I：

10.1016/0022-3697(76)90113-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：629 / 637

页数：9

共 41 条

[1] ELECTROREFLECTANCE AND BAND-STRUCTURE OF GAXIN1-XP ALLOYS
ALIBERT, C
CHEVALLI.J
BORDURE, G
LAUGIER, A
[J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1301 - &
[2] ENERGY LEVELS OF NITROGEN-NITROGEN PAIRS IN GALLIUM PHOSPHIDE
ALLEN, JW
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (04): : 1136 - &
[3] ARCHER RJ, 1972, J ELECTRON MATER, V1, P128
[4] ARCHER RJ, 1970, SPR M EL CHEM SOC, P183
[5] BAND-STRUCTURE ENHANCEMENT AND OPTIMIZATION OF RADIATIVE RECOMBINATION IN GAAS1-XPX-N (AND IN1-XGAXP-N)
CAMPBELL, JC
HOLONYAK, N
CRAFORD, MG
KEUNE, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) : 4543 - 4553
[6] LIQUID-PHASE EPITAXIAL IN 1-XGAXP1-ZASZ/GAAS1-YPY QUATERNARY (LPE)-TERNARY (VPE) HETEROJUNCTION LASERS (X-0.70, Z-0.01, Y-0.40 - LAMBDA LESS-THAN 6300 A,77 DEGREES K)
COLEMAN, JJ
HITCHENS, WR
HOLONYAK, N
LUDOWISE, MJ
GROVES, WO
KEUNE, DL
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 725 - 727
[7] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING
CRAFORD, MG
SHAW, RW
HERZOG, AH
GROVES, WO
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4075 - &
[8] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE
DEAN, PJ
THOMAS, DG
[J]. PHYSICAL REVIEW, 1966, 150 (02): : 690 - &
[9] INTRINSIC OPTICAL ABSORPTION OF GALLIUM PHOSPHIDE BETWEEN 2.33 AND 3.12 EV
DEAN, PJ
KAMINSKY, G
ZETTERSTROM, RB
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3551 - +
[10] OPTICAL ABSORPTION BY IMPURITIES IN P-TYPE GALLIUM PHOSPHIDE
DISHMAN, JM
DIDOMENICO, M
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (08): : 2621 - +

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