RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING

被引：151

作者：

CRAFORD, MG

SHAW, RW

HERZOG, AH

GROVES, WO

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 10期

关键词：

D O I：

10.1063/1.1660876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4075 / &

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[7] 2-ELECTRON TRANSITIONS IN LUMINESCENCE OF EXCITONS BOUND TO NEUTRAL DONORS IN GALLIUM PHOSPHIDE
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[J]. APPLIED PHYSICS LETTERS, 1971, 19 (06) : 184 - &
[10] ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS
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