MOLECULAR-BEAM EPITAXIAL-GROWTH OF UNDOPED LOW-RESISTIVITY INXGA1-XP ON GAAS AT HIGH SUBSTRATE TEMPERATURES (500-DEGREES-C-580-DEGREES-C)

被引：12

作者：

KAWAMURA, Y

ASAHI, H

NAGAI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 11期

关键词：

D O I：

10.1143/JJAP.20.L807

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L807 / L810

页数：4

共 12 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP HOMOEPITAXIAL LAYERS AND THEIR ELECTRICAL AND OPTICAL-PROPERTIES [J].

ASAHI, H ;

KAWAMURA, Y ;

IKEDA, M ;

OKAMOTO, H .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2852-2859

[2] COMPOSITION STUDIES OF MBE GALNP ALLOYS BY RUTHERFORD SCATTERING AND X-RAY-DIFFRACTION [J].

BLOOD, P ;

BYE, KL ;

ROBERTS, JS .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1790-1797

[3] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP [J].

HITCHENS, WR ;

HOLONYAK, N ;

LEE, MH ;

CAMPBELL, JC .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :154-165

[4]

KAWAMURA Y, 1981, J APPL PHYS, V52, P3445, DOI 10.1063/1.329119

[5] PHOTO-LUMINESCENCE OF UNDOPED (100) INP HOMOEPITAXIAL FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

KAWAMURA, Y ;

IKEDA, M ;

ASAHI, H ;

OKAMOTO, H .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :481-484

[6] LATTICE DEFORMATION AND MISORIENTATION OF INXGA1-X AS EPITAXIAL LAYERS GROWN ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

KAWAMURA, Y ;

OKAMOTO, H .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4457-4458

[7] ASYMMETRIC CRACKING IN III-V COMPOUNDS [J].

OLSEN, GH ;

ABRAHAMS, MS ;

ZAMEROWSKI, TJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (12) :1650-1656

[8] EFFECT OF ELASTIC STRAIN ON ENERGY-BAND GAP AND LATTICE-PARAMETER IN III-V-COMPOUNDS [J].

OLSEN, GH ;

NUESE, CJ ;

SMITH, RT .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) :5523-5529

[9]

Scott G B, 1979, I PHYS C SER, V45, P181

[10] VAPOR GROWTH OF IN1-XGAXP FOR P-N-JUNCTION ELECTROLUMINESCENCE .1. MATERIAL PREPARATION [J].

SIGAI, AG ;

NUESE, CJ ;

ENSTROM, RE ;

ZAMEROWSKI, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) :947-955

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