PHOTO-LUMINESCENCE OF UNDOPED (100) INP HOMOEPITAXIAL FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：14

作者：

KAWAMURA, Y

IKEDA, M

ASAHI, H

OKAMOTO, H

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph, Telephone Public Corporation, Musashino-shi

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 07期

关键词：

D O I：

10.1063/1.91204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparative study is given of the photoluminescence properties between undoped (100) InP homoepitaxial MBE and LPE films and bulk crystals. All of the samples show two peaks; one is a near band-edge emission at 1.41 eV with a small shoulder and the other is at about 1.13 eV. It is shown that the MBE films have a near band-edge emission with intensity comparable with the LPE films, and exhibit a smaller amount of deep-level emission than the LPE films and bulk crystals.

引用

页码：481 / 484

页数：4

共 12 条

[1] SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS
CHO, AY
HAYASHI, I
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (02) : 125 - &
[2] FARIMAN FD, 1976, 6TH P INT S GALL ARS, P45
[3] Farrow R. F. C., 1975, Electrochemical Society Fall Meeting (Extended abstracts only received), P547
[4] FARROW RC, 1974, J PHYS D, V7, P121
[5] FARROW RFC, 1975, J PHYS D, V8, P87
[6] ILGEMS M, 1975, J APPL PHYS, V46, P3059
[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INP
MCFEE, JH
MILLER, BI
BACHMANN, KJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (02) : 259 - 272
[8] ROOM-TEMPERATURE OPERATION OF LATTICE-MATCHED INP-GA0.47IN0.53AS-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY MBE
MILLER, BI
MCFEE, JH
MARTIN, RJ
TIEN, PK
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 44 - 47
[9] GROWTH OF GAYIN1-YAS-INP HETEROSTRUCTURES BY MOLECULAR-BEAM EPITAXY
MILLER, BI
MCFEE, JH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : 1310 - 1317
[10] Mullin J. B., 1972, Journal of Crystal Growth, V13-14, P640, DOI 10.1016/0022-0248(72)90534-9

← 1 2 →