MODELING AND CHARACTERIZATION FOR HIGH-SPEED GAALAS-GAAS N-P-N HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：35

作者：

KURATA, M

YOSHIDA, J

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 04期

关键词：

D O I：

10.1109/T-ED.1984.21552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：467 / 473

页数：7

共 12 条

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[10] DOUBLE HETEROJUNCTION ALXGA1-XAS/GAAS BIPOLAR-TRANSISTORS (DHBJTS) BY MBE WITH A CURRENT GAIN OF 1650 [J].

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