DOUBLE HETEROJUNCTION ALXGA1-XAS/GAAS BIPOLAR-TRANSISTORS (DHBJTS) BY MBE WITH A CURRENT GAIN OF 1650

被引：28

作者：

SU, SL

TEJAYADI, O

DRUMMOND, TJ

FISCHER, R

MORKOC, H

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 05期

关键词：

D O I：

10.1109/EDL.1983.25676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：130 / 132

页数：3

相关论文

共 10 条

[1] DIFFUSED EPITAXIAL GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-FREQUENCY OPERATION
ANKRI, D
SCAVENNEC, A
BESOMBES, C
COURBET, C
HELIOT, F
RIOU, J
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (09) : 816 - 818
[2] ASBECK PM, 1982, IEEE ELECTRON DEVICE, V3, P366
[3] DESIGN AND FABRICATION OF HIGH-SPEED GAAIAS-GAAS HETEROJUNCTION TRANSISTORS
BAILBE, JP
MARTY, A
HIEP, PH
REY, GE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1160 - 1164
[4] DOUBLE HETEROJUNCTION NPN GAAIAS GAAS BIPOLAR-TRANSISTOR
BENEKING, H
SU, LM
[J]. ELECTRONICS LETTERS, 1982, 18 (01) : 25 - 26
[5] GAAS-GAALAS HETEROJUNCTION TRANSISTOR FOR HIGH-FREQUENCY OPERATION
DUMKE, WP
WOODALL, JM
RIDEOUT, VL
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1339 - +
[6] (GAAL)AS-GAAS HETEROJUNCTION PHOTOTRANSISTORS WITH HIGH-CURRENT GAIN
KONAGAI, M
KATSUKAWA, K
TAKAHASHI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4389 - 4394
[7] THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS
KROEMER, H
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (11): : 1535 - 1537
[8] GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR INTEGRATED-CIRCUIT APPLICATIONS
MCLEVIGE, WV
YUAN, HT
DUNCAN, WM
FRENSLEY, WR
DOERBECK, FH
MORKOC, H
DRUMMOND, TJ
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (02): : 43 - 45
[9] INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY
MORKOC, H
DRUMMOND, TJ
FISCHER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1030 - 1033
[10] YUAN HT, 1982, P GAAS IC S