RAMAN-SCATTERING STUDIES OF SURFACE SPACE-CHARGE LAYERS AND SCHOTTKY-BARRIER FORMATION IN INP

被引：66

作者：

PINCZUK, A

BALLMAN, AA

NAHORY, RE

POLLACK, MA

WORLOCK, JM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1168 / 1170

页数：3

共 17 条

[1] ABSTREITER G, 1976, 13TH P INT C PHYS SE, P779
[2] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES
BRILLSON, LJ
BACHRACH, RZ
BAUER, RS
MCMENAMIN, J
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401
[3] Cardona M., 1975, LIGHT SCATTERING SOL, p[2, 3]
[4] TUNNELING SPECTROSCOPY IN GAAS
CONLEY, JW
MAHAN, GD
[J]. PHYSICAL REVIEW, 1967, 161 (03): : 681 - +
[5] CORDEN P, 1970, 10TH P INT C PHYS SE, P739
[6] RAMAN EFFECT IN CRYSTALS
LOUDON, R
[J]. ADVANCES IN PHYSICS, 1964, 13 (52) : 423 - &
[7] Many A., 1965, SEMICONDUCTOR SURFAC
[8] MEAD CA, 1964, PHYS REV A, V134, P713
[9] MILLS DL, 1971, VIJNANA PARISHAD ANU, V14, P115
[10] MOORADIAN A, 1969, ADV SOLID STATE PHYS, V9, P74