EPITAXIAL GROWTH OF DOPED SILICON USING AN IODINE CYCLE

被引：10

作者：

TAFT, EA

机构：

来源：

关键词：

D O I：

10.1149/1.2408372

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1535 / &

共 11 条

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[5]

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[8]

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ROLSTEN RF, IODIDE METALS METAL, P273

SIRTL, E .