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PHYSICAL CHARACTERIZATION OF HOT-ELECTRON-INDUCED MOSFET DEGRADATION THROUGH AN IMPROVED APPROACH TO THE CHARGE-PUMPING TECHNIQUE

被引：14
作者：
BERGONZONI, C
LIBERA, GD
机构：
[1] SGS-Thomson Microelectronics, Central R&D, 20041, Agrate Brianza, MI
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 08期
关键词：
D O I：
10.1109/16.144681
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The physical mechanisms which are involved in the hot-carrier-induced degradation of CMOS transistor are analyzed by means of an improved approach to the charge-pumping measurement technique. The proposed experimental procedure allows the simultaneous characterization of both interface-states generation and carrier trapping in the gate insulator. The analysis is extended to both static and dynamic degradation processes, whose differences and similarities are discussed.
引用
收藏
页码：1895 / 1901
页数：7
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