A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS

[1] MEASUREMENT OF INTERFACE STATE CHARACTERISTICS OF MOS-TRANSISTOR UTILIZING CHARGE-PUMPING TECHNIQUES [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (02): : 44 - 52

[2] BELTRAN N, 1981, THESIS KATHOLIEKE U

[3] BELTRAN N, 1982, SEP ESSDERC SSDT MUN

[4] BOSCH J, 1979, THESIS GRONINGEN STA

[5] EXPERIMENTAL RESULTS ON FAST SURFACE STATES AND 1-F NOISE IN MOS-TRANSISTORS [J]. ELECTRONICS LETTERS, 1975, 11 (05) : 97 - 98

[6] CHARGE PUMPING IN MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) : 297 - +

[7] Declercq M., 1974, Revue HF, V9, P244

[8] USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (03) : 241 - 247

[9] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[10] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[1] MEASUREMENT OF INTERFACE STATE CHARACTERISTICS OF MOS-TRANSISTOR UTILIZING CHARGE-PUMPING TECHNIQUES [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (02): : 44 - 52

[2] BELTRAN N, 1981, THESIS KATHOLIEKE U

[3] BELTRAN N, 1982, SEP ESSDERC SSDT MUN

[4] BOSCH J, 1979, THESIS GRONINGEN STA

[5] EXPERIMENTAL RESULTS ON FAST SURFACE STATES AND 1-F NOISE IN MOS-TRANSISTORS [J]. ELECTRONICS LETTERS, 1975, 11 (05) : 97 - 98

[6] CHARGE PUMPING IN MOS DEVICES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) : 297 - +

[7] Declercq M., 1974, Revue HF, V9, P244

[8] USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (03) : 241 - 247

[9] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548

[10] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &