USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS

被引：140

作者：

ELLIOT, ABM ^{[1
]}

机构：

[1] PO RES DEPT, MARTLESHAM HEATH, IPSWICH, ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 03期

关键词：

D O I：

10.1016/0038-1101(76)90169-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：241 / 247

页数：7

共 18 条

[1] MOST CHANNEL-LENGTH MEASUREMENT [J].

BATEMAN, IM ;

MAGOWAN, JA .

ELECTRONICS LETTERS, 1970, 6 (21) :669-&

[2] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].

BERGLUND, CN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+

[3] CHARGE PUMPING IN MOS DEVICES [J].

BRUGLER, JS ;

JESPERS, PGA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) :297-+

[4]

CASTAGNE R, 1968, CR ACAD SCI B PHYS, V267, P866

[5] FORMATION OF SURFACE STATES DURING STRESS AGING OF THERMAL SI-SIO2 INTERFACES [J].

GOETZBER.A ;

LOPEZ, AD ;

STRAIN, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) :90-96

[6] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].

GRAY, PV ;

BROWN, DM .

APPLIED PHYSICS LETTERS, 1966, 8 (02) :31-&

[7] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].

GROVE, AS ;

FITZGERALD, DJ .

SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+

[8] STABILIZATION OF MOS DEVICES [J].

HOFSTEIN, SR .

SOLID-STATE ELECTRONICS, 1967, 10 (07) :657-+

[9] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].

KUHN, M .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+

[10] IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J].

LEHOVEC, K ;

SLOBODSKOY, A .

SOLID-STATE ELECTRONICS, 1964, 7 (01) :59-79

← 1 2 →