FORMATION OF SURFACE STATES DURING STRESS AGING OF THERMAL SI-SIO2 INTERFACES

被引：88

作者：

GOETZBER.A ^{[1
]}

LOPEZ, AD ^{[1
]}

STRAIN, RJ ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

关键词：

D O I：

10.1149/1.2403408

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：90 / 96

页数：7

共 25 条

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