CHARGE PUMPING IN MOS DEVICES

被引：345

作者：

BRUGLER, JS

JESPERS, PGA

机构：

[1] Stanford University, Stanford, Calif.

[2] Catholic University of Louvain, Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 03期

关键词：

D O I：

10.1109/T-ED.1969.16744

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gate pulses applied to MOS transistors were found to stimulate a net flow of charge into the substrate. Investigation of this effect revealed a charge-pumping phenomeonon in MOS gate-controlled-diode structures. A first-order theory is given, whereby the injected charge is separated into two components. One component involves coupling via fast surface states at the Si-SiO2 interface under the gate, while the other involves recombination of free inversion-layer charge into the substrate. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：297 / +

页数：1

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