MEASUREMENT OF INTERFACE STATE CHARACTERISTICS OF MOS-TRANSISTOR UTILIZING CHARGE-PUMPING TECHNIQUES

被引：7

作者：

BACKENSTO, WV ^{[1
]}

VISWANATHAN, CR ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES, SCH ELECT ENGN & APPL SCI, LOS ANGELES, CA 90024 USA

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1981年 / 128卷 / 02期

关键词：

D O I：

10.1049/ip-i-1.1981.0018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：44 / 52

页数：9

共 24 条

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