PHOTOINDUCED SURFACE-POTENTIAL IN POLYIMIDE LANGMUIR-BLODGETT-FILMS

被引：11

作者：

IWAMOTO, M

FUKUDA, A

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 02期

关键词：

POLYIMIDE; LB; SURFACE POTENTIAL;

D O I：

10.1143/JJAP.32.860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examined the photoresponse of the surface potential across polyimide (PI) Langmuir-Blodgett (LB) films deposited on base-Au electrodes, and then analyzed the surface potential change initiated with photoirradiation by assuming a model based on the three-step process of photoconductivity in polymers. In the model, photogeneration of carriers is of the Onsager type, where a space charge field formed at the PI/base-Au electrode interface makes a significant contribution to the photogeneration, and the succeeding carrier transport does not suffer from bimolecular recombination.

引用

页码：860 / 863

页数：4

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