PHOTOINDUCED DISPLACEMENT CURRENT IN POLYIMIDE LANGMUIR-BLODGETT-FILMS DEPOSITED ON AU ELECTRODES

被引：9

作者：

FUKUDA, A

IWAMOTO, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, 152, 2-12-1 O-okayama, Meguro-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 5B期

关键词：

POLYIMIDE; LB; DISPLACEMENT CURRENT; SURFACE POTENTIAL;

D O I：

10.1143/JJAP.31.L622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoinduced displacement current across polyimide (PI) Langmuir-Blodgett (LB) films incorporated in Au/PI/air-gap/Au structures was investigated without the application of an external electric field. Transient displacement current was found to be produced by photoirradiation with a wavelength of 400 nm, because carriers were generated in PI LB films and were then conveyed along the electric field established in a Schottky depletion region in the PI LB films.

引用

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页码：L622 / L625

页数：4

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