CONTROLLED ZN DIFFUSION FOR LOW THRESHOLD NARROW STRIPE GAALAS-GAAS DH LASERS

被引:6
作者
HONG, CS
LIU, YZ
DAPKUS, PD
COLEMAN, JJ
机构
来源
ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 09期
关键词
D O I
10.1109/EDL.1981.25412
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:225 / 227
页数:3
相关论文
共 9 条
[1]   LATERAL-MODE BEHAVIOR IN NARROW STRIPE LASERS [J].
ASBECK, PM ;
CAMMACK, DA ;
DANIELE, JJ ;
KLEBANOFF, V .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :727-733
[2]   GAIN-INDUCED GUIDING AND ASTIGMATIC OUTPUT BEAM OF GAAS LASERS [J].
COOK, DD ;
NASH, FR .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1660-1672
[3]   DEPENDENCE OF ZN DIFFUSION ON AL CONTENT IN GA1-XALXAS [J].
LEE, CP ;
MARGALIT, S ;
YARIV, A .
SOLID-STATE ELECTRONICS, 1978, 21 (06) :905-&
[4]  
NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670
[5]  
SHEWMAN PG, 1963, DIFFUSION SOLIDS
[6]   HIGH SURFACE CONCENTRATION ZN DIFFUSION IN GAAS [J].
SHIH, KK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (11) :1737-1740
[7]   TWIN-TRANSVERSE-JUNCTION STRIPE LASER WITH LINEAR LIGHT-CURRENT CHARACTERISTIC AND LOW THRESHOLD [J].
THOMPSON, GHB ;
LOVELACE, DF ;
TURLEY, SEH .
ELECTRONICS LETTERS, 1979, 15 (04) :133-134
[8]   GUIDING MECHANISMS CONTROLLED BY IMPURITY CONCENTRATIONS-(AL,GA)AS PLANAR STRIPE LASERS WITH DEEP ZN DIFFUSION [J].
UENO, M ;
YONEZU, H .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2361-2371
[9]   NEW STRIPE GEOMETRY LASER WITH HIGH-QUALITY LASING CHARACTERISTICS BY HORIZONTAL TRANSVERSE MODE STABILIZATION - REFRACTIVE-INDEX GUIDING WITH ZN DOPING [J].
YONEZU, H ;
MATSUMOTO, Y ;
SHINOHARA, T ;
SAKUMA, I ;
SUZUKI, T ;
KOBAYASHI, K ;
LANG, R ;
NANNICHI, Y ;
HAYASHI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) :209-210