GUIDING MECHANISMS CONTROLLED BY IMPURITY CONCENTRATIONS-(AL,GA)AS PLANAR STRIPE LASERS WITH DEEP ZN DIFFUSION

被引：14

作者：

UENO, M

YONEZU, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 05期

关键词：

D O I：

10.1063/1.328006

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2361 / 2371

页数：11

相关论文

共 28 条

[1] TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE
AIKI, K
NAKAMURA, M
KURODA, T
UMEDA, J
ITO, R
CHINONE, N
MAEDA, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) : 89 - 94
[2] CONCENTRATION-DEPENDENCE OF ABSORPTION-COEFFICIENT FOR N-TYPE AND P-TYPE GAAS BETWEEN 1.3 AND 1.6 EV
CASEY, HC
SELL, DD
WECHT, KW
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 250 - 257
[3] REFRACTIVE-INDEX OF ALXGA1-X AS BETWEEN 1.2 AND 1.8 EV
CASEY, HC
SELL, DD
PANISH, MB
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (02) : 63 - 65
[4] CASEY HC, 1978, J APPL PHYS, V49, P3684, DOI 10.1063/1.325421
[5] ELECTROLUMINESCENT SHIFTING-PEAK SPECTRA IN GAAS WITH UNIFORM EXCITATION
CASEY, HC
BACHRACH, RZ
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2795 - 2804
[6] Casey Jr H. C., 1978, HETEROSTRUCTURE LA A
[7] GAIN-INDUCED GUIDING AND ASTIGMATIC OUTPUT BEAM OF GAAS LASERS
COOK, DD
NASH, FR
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1660 - 1672
[8] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358
[9] EFFECT OF DEVICE GEOMETRY ON LATERAL-MODE CONTENT OF STRIPE GEOMETRY LASERS
DELANEY, JB
BUTLER, JK
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 750 - 755
[10] GROVE AS, 1967, PHYS TECHNOL S, pCH3