ELECTROLUMINESCENT SHIFTING-PEAK SPECTRA IN GAAS WITH UNIFORM EXCITATION

被引：19

作者：

CASEY, HC ^{[1
]}

BACHRACH, RZ ^{[1
]}

机构：

[1] BELL LABS, MURRAY HILL, NJ 07974 USA

来源：

关键词：

D O I：

10.1063/1.1662652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2795 / 2804

页数：10

共 35 条

[1] Alferov Zh. I., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P1054
[2] Alferov Zh. I., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1016
[3] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P843
[4] ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P885
[5] INVESTIGATION OF GALLIUM ARSENIDE EMISSION DIODE CHARACTERISTICS WITH TRANSISTOR STRUCTURES
ASHLEY, KL
DOERBECK, FH
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4493 - &
[6] ASHLEY KL, 1969, 2 P INT S GAAS, P123
[7] PHOTON COUNTING APPARATUS FOR KINETIC AND SPECTRAL MEASUREMENTS
BACHRACH, RZ
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (05) : 734 - &
[8] LASER CONDITIONS IN SEMICONDUCTORS
BERNARD, MGA
DURAFFOURG, G
[J]. PHYSICA STATUS SOLIDI, 1961, 1 (07): : 699 - 703
[9] BONCHBRUYEVICH VL, 1968, ELECTRONIC THEORY HE
[10] ELECTROLUMINESCENCE IN AMPNOTERIC SILICON-DOPED GAAS DIODES .2. TRANSIENT RESPONSE
BYER, NE
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1602 - &