INVESTIGATION OF GALLIUM ARSENIDE EMISSION DIODE CHARACTERISTICS WITH TRANSISTOR STRUCTURES

被引：4

作者：

ASHLEY, KL

DOERBECK, FH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1971年 / 42卷 / 11期

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D O I：

10.1063/1.1659800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：4493 / &

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[1] ASARO, 1963, APPL PHYS LETTERS, V2, P182
[2] ASHLEY KL, 1969, 1968 GAAS S P, P123
[3] ASHLEY KL, 1970, IEEE T ELECTRON DEVI, VED17, P633
[4] DETERMINATION OF INTRINSIC DENSITY OF SILICON BELOW TEMPERATURE OF INTRINSIC CONDUCTION FROM ELECTRIC MEASUREMENTS ON TRANSISTORS
BENDA, H
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (03) : 189 - &
[5] ELECTROLUMINESCENCE IN AMPHOTERIC SILICON-DOPED GAAS DIODES .1. STEADY-STATE RESPONSE
BYER, NE
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1597 - &
[6] RADIATIVE TUNNELING IN GAAS ABRUPT ASYMMETRICAL JUNCTIONS
CASEY, HC
SILVERSMITH, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 241 - +
[7] Properties of spontaneous and stimulated emission in GaAs junction lasers. I. Densities of states in the active regions
Hwang, C. J.
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4117 - 4125
[8] IWERSEN JE, 1962, IRE T ELECTRON DEV, VED9, P474
[9] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
KRESSEL, H
DUNSE, JU
NELSON, H
HAWRYLO, FZ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &
[10] BAND-FILLING MODEL FOR GAAS INJECTION LUMINESCENCE
NELSON, DF
GERSHENZON, M
ASHKIN, A
[J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 182 - 184