INTERFERENCE ENHANCED RAMAN-SCATTERING STUDY OF THE INTERFACIAL REACTION OF PD ON A-SI-H

被引：68

作者：

NEMANICH, RJ ^{[1
]}

TSAI, CC ^{[1
]}

THOMPSON, MJ ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：685 / 688

页数：4

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共 15 条

[1] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION
CHU, WK
LAU, SS
MAYER, JW
MULLER, H
[J]. THIN SOLID FILMS, 1975, 25 (02) : 393 - 402
[2] INTERFERENCE ENHANCED RAMAN-SCATTERING FROM VERY THIN ABSORBING FILMS
CONNELL, GAN
NEMANICH, RJ
TSAI, CC
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 31 - 33
[3] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE
FREEOUF, JL
RUBLOFF, GW
HO, PS
KUAN, TS
[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839
[4] POROSITY AND OXIDATION OF AMORPHOUS SILICON FILMS PREPARED BY EVAPORATION, SPUTTERING AND PLASMA-DEPOSITION
FRITZSCHE, H
TSAI, CC
[J]. SOLAR ENERGY MATERIALS, 1979, 1 (5-6): : 471 - 479
[5] GROVE AS, 1967, PHYS TECHNOL S, P23
[6] CHEMICAL AND STRUCTURAL-PROPERTIES OF THE PD-SI INTERFACE DURING THE INITIAL-STAGES OF SILICIDE FORMATION
HO, PS
TAN, TY
LEWIS, JE
RUBLOFF, GW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1120 - 1124
[7] KNIGHT JC, 1976, P C STRUCTURE EXCITA, P296
[8] KNIGHTS JC, 1980, CRC CRIT REV SOLID S, P211
[9] MANSURIPUR M, UNPUBLISHED
[10] INTERFERENCE-ENHANCED RAMAN-SCATTERING OF VERY THIN TITANIUM AND TITANIUM-OXIDE FILMS
NEMANICH, RJ
TSAI, CC
CONNELL, GAN
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (04) : 273 - 276